HX4N60 mosfet equivalent, n-channel mosfet.
z RDS(ON) =2.50Ω@VGS = 10 V z Low gate charge ( typical 16nC) z High ruggedness z Fast switching capability z Avalanche energy specified z Improved dv/dt capability
*.
such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
* Features
z RDS(ON) =2..
The HX4N60 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
* Features
z RDS(ON).
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